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august 2007 rev 5 1/48 1 m29w400dt m29w400db 4 mbit (512 kb x 8 or 256 kb x 16, boot block) 3 v supply flash memory features supply voltage ?v cc = 2.7 v to 3.6 v for program, erase and read access time: 45, 55, 70 ns programming time ? 10 s per byte/word typical 11 memory blocks ? 1 boot block (top or bottom location) ? 2 parameter and 8 main blocks program/erase controller ? embedded byte/word program algorithms erase suspend and resume modes ? read and program another block during erase suspend unlock bypass program command ? faster production/batch programming temporary block unprotection mode low power consumption ? standby and automatic standby 100,000 program/erase cycles per block electronic signature ? manufacturer code: 0020h ? top device code m29w400dt: 00eeh ? bottom device code m29w400db: 00efh ?ecopack ? packages 1. these packages are no more in mass production. tfbga48 (za) (1) 6 x 9 mm fbga so44 (m) (1) tfbga48 (ze) 6 x 8 mm tsop48 (n) 12 x 20 mm fbga www.st.com
contents m29w400dt, m29w400db 2/48 contents 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.1 address inputs (a0-a17) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.2 data inputs/outputs (dq0-dq7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.3 data inputs/outputs (dq8-dq14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.4 data input/output or address input (dq15a-1) . . . . . . . . . . . . . . . . . . . . 13 2.5 chip enable (e ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.6 output enable (g ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.7 write enable (w ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.8 reset/block temporary unprotect (rp ) . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.9 ready/busy output (rb ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.10 byte/word organization select (byte ) . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.11 v cc supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.12 v ss ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3 bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.1 bus read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.2 bus write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.3 output disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.4 standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.5 automatic standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.6 special bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.7 electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.8 block protection and blocks unprotection . . . . . . . . . . . . . . . . . . . . . . . . . 17 4 command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.1 read/reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.2 auto select command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.3 program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.4 unlock bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.5 unlock bypass program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
m29w400dt, m29w400db contents 3/48 4.6 unlock bypass reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.7 chip erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.8 block erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.9 erase suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.10 erase resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.11 block protect and chip unprotect commands . . . . . . . . . . . . . . . . . . . . . 22 5 status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.1 data polling bit (dq7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.2 toggle bit (dq6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.3 error bit (dq5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 5.4 erase timer bit (dq3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 5.5 alternative toggle bit (dq2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6 maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 7 dc and ac parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 8 package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 9 part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 appendix a block address table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 appendix b block protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 b.1 programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 b.2 in-system technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
list of tables m29w400dt, m29w400db 4/48 list of tables table 1. signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 2. bus operations, byte = v il . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table 3. bus operations, byte = v ih. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 table 4. program, erase times and program, erase endurance cycles . . . . . . . . . . . . . . . . . . . . . . 22 table 5. commands, 16-bit mode, byte = v ih . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 table 6. commands, 8-bit mode, byte = v il . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 table 7. status register bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 table 8. absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 table 9. operating and ac measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 table 10. device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 table 11. dc characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 table 12. read ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 table 13. write ac characteristics, write enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 table 14. write ac characteristics, chip enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 table 15. reset/block temporary unprotect ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 table 16. so44 ? 44 lead plastic small outline, 525 mils body width, package mechanical data . . . 35 table 17. tsop48 ? 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data . . . . 36 table 18. tfbga48 6 x 9 mm, 6 x 8 active ball array, 0.80 mm pitch, package mechanical data. . . 37 table 19. tfbga48 6 x 8 mm, 6 x 8 active ball array, 0.80 mm pitch, package mechanical data. . . 38 table 20. ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 table 21. top boot block addresses m29w400dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 table 22. bottom boot block addresses m29w400db . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 table 23. programmer technique bus operations, byte =v ih or v il . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 table 24. document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
m29w400dt, m29w400db list of figures 5/48 list of figures figure 1. logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 figure 2. so connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 3. tsop connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 figure 4. tfbga connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 5. block addresses (x 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 6. block addresses (x 16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 7. data polling flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 8. data toggle flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 9. ac measurement i/o waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 9 figure 10. ac measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 figure 11. read mode ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 figure 12. write ac waveforms, write enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 figure 13. write ac waveforms, chip enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 figure 14. reset/block temporary unprotect ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 figure 15. so44 - 44 lead plastic small outline, 525 mils body width, package outline. . . . . . . . . . . . 35 figure 16. tsop48 ? 48 lead plastic thin small outline, 12 x 20 mm, package outline . . . . . . . . . . . . 36 figure 17. tfbga48 6 x 9 mm, 6 x 8 active ball array, 0.80 mm pitch, bottom view package outline 37 figure 18. tfbga48 6 x 8 mm, 6 x 8 active ball array, 0.80 mm pitch, bottom view package outline 38 figure 19. programmer equipment block protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 figure 20. programmer equipment chip unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 figure 21. in-system equipment block protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 figure 22. in-system equipment chip unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
description m29w400dt, m29w400db 6/48 1 description the m29w400d is a 4 mbit (512 kb x 8 or 256 kb x 16) non-volatile memory that can be read, erased and reprogrammed. these operations can be performed using a single low voltage (2.7 to 3.6 v) supply. on power-up the memory defaults to its read mode where it can be read in the same way as a rom or eprom. the memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. each block can be protected independently to prevent accidental program or erase commands from modifying the memory. program and erase commands are written to the command interface of the memory. an on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. the end of a program or erase operation can be detected and any error conditions identified. the command set required to cont rol the memory is consistent with jedec standards. the blocks in the memory are asymmetrically arranged, see figure 5 and figure 6 , block addresses. the first or last 64 kbytes have been divided into four additional blocks. the 16 kbyte boot block can be used for small initialization code to start the microprocessor, the two 8 kbyte parameter blocks can be used for parameter storage and the remaining 32 kbyte is a small main block where the application may be stored. chip enable, output enable and write enable signals control the bus operation of the memory. they allow simple connection to most microprocessors, often without additional logic. the memory is offered in so44, tsop48 (12 x 20 mm), tfbga48 0.8 mm pitch (6 x 9 mm and 6 x 8 mm) packages. the memory is supplied with all the bits erased (set to ?1?). in order to meet environmental requirements, st offers the m29w400d in ecopack ? packages. ecopack packages are lead-free. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com.
m29w400dt, m29w400db description 7/48 figure 1. logic diagram table 1. signal names signal name function direction a0-a17 address inputs inputs dq0-dq7 data inputs/outputs i/o dq8-dq14 data inputs/outputs i/o dq15a?1 data input/output or address input i/o e chip enable input g output enable input w write enable input rp reset/block temporary unprotect input rb ready/busy output output byte byte/word organization select output v cc supply voltage v ss ground nc not connected internally ai06853 18 a0-a17 w dq0-dq14 v cc m29w400dt m29w400db e v ss 15 g rp dq15a?1 byte rb
description m29w400dt, m29w400db 8/48 figure 2. so connections 1. nc = not connected. g dq0 dq8 a3 a0 e v ss a2 a1 a13 v ss a14 a15 dq7 a12 a16 byte dq15a?1 dq5 dq2 dq3 v cc dq11 dq4 dq14 a9 w rb a4 rp a7 ai06855 m29w400dt m29w400db 8 2 3 4 5 6 7 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 20 19 18 17 dq1 dq9 a6 a5 dq6 dq13 44 39 38 37 36 35 34 33 a11 a10 dq10 21 dq12 40 43 1 42 41 a17 a8 nc
m29w400dt, m29w400db description 9/48 figure 3. tsop connections 1. nc = not connected. dq3 dq9 dq2 a6 dq0 w a3 rb dq6 a8 a9 dq13 a17 a10 dq14 a2 dq12 dq10 dq15a?1 v cc dq4 dq5 a7 dq7 nc nc ai06854 m29w400dt m29w400db 12 1 13 24 25 36 37 48 dq8 nc nc a1 nc a4 a5 dq1 dq11 g a12 a13 a16 a11 byte a15 a14 v ss e a0 rp v ss
description m29w400dt, m29w400db 10/48 figure 4. tfbga connections (top view through package) 1. nc = not connected. ai06856 b a 4 3 2 1 g f h dq15 a?1 a7 a3 dq10 dq8 e dq13 dq11 dq9 g v ss dq6 dq1 v ss dq14 a12 nc a17 a4 a14 a10 nc nc a6 a2 rp a8 dq4 dq3 v cc dq12 a9 byte a15 a11 nc a1 a16 dq7 dq5 dq2 a0 nc dq0 a5 e d c rb w a13 6 5
m29w400dt, m29w400db description 11/48 figure 5. block addresses (x 8) 1. also see appendix a: block address table , table 21: top boot bloc k addresses m29w400dt and table 22: bottom boot block addresses m29w400db for a full listing of the block addresses. ai06857b 16 kbyte 7ffffh 7c000h 64 kbyte 1ffffh 10000h 64 kbyte 0ffffh 00000h m29w400dt top boot block addresses (x 8) 32 kbyte 77fffh 70000h 64 kbyte 60000h 6ffffh total of 7 64 kbyte blocks 16 kbyte 7ffffh 70000h 64 kbyte 64 kbyte 03fffh 00000h m29w400db bottom boot block addresses (x 8) 32 kbyte 6ffffh 1ffffh 64 kbyte 60000h 10000h total of 7 64 kbyte blocks 0ffffh 08000h 8 kbyte 8 kbyte 7bfffh 7a000h 79fffh 78000h 8 kbyte 8 kbyte 07fffh 06000h 05fffh 04000h
description m29w400dt, m29w400db 12/48 figure 6. block addresses (x 16) 1. also see appendix a: block address table , table 21: top boot bloc k addresses m29w400dt and table 22: bottom boot block addresses m29w400db for a full listing of the block addresses. ai06858b 8 kword 3ffffh 3e000h 32 kword 0ffffh 08000h 32 kword 07fffh 00000h m29w400dt top boot block addresses (x 16) 16 kword 3bfffh 38000h 32 kword 30000h 37fffh total of 7 32 kword blocks 8 kword 3ffffh 38000h 32 kword 32 kword 01fffh 00000h m29w400db bottom boot block addresses (x 16) 16 kword 37fffh 0ffffh 32 kword 30000h 08000h total of 7 32 kword blocks 07fffh 04000h 4 kword 4 kword 3dfffh 3d000h 3cfffh 3c000h 4 kword 4 kword 03fffh 03000h 02fffh 02000h
m29w400dt, m29w400db signal descriptions 13/48 2 signal descriptions see figure 1: logic diagram , and ta b l e : , for a brief overview of the signals connected to this device. 2.1 address inputs (a0-a17) the address inputs select the cells in th e memory array to a ccess during bus read operations. during bus write operations they control the commands sent to the command interface of the program/erase controller. 2.2 data inputs/outputs (dq0-dq7) the data inputs/outputs output the data stored at the selected address during a bus read operation. during bus write operations they represent the commands sent to the command interface of the program/erase controller. 2.3 data inputs/outputs (dq8-dq14) the data inputs/outputs output the data stored at the selected address during a bus read operation when byte is high, v ih . when byte is low, v il , these pins are not used and are high impedance. during bus write operations the command register does not use these bits. when reading the status register these bits should be ignored. 2.4 data input/output or address input (dq15a-1) when byte is high, v ih , this pin behaves as a data input/output pin (as dq8-dq14). when byte is low, v il , this pin behaves as an address pin; dq15a?1 low will select the lsb of the word on the othe r addresses, dq15a?1 high will select the msb. throughout the text consider references to the data input/output to include this pin when byte is high and references to the address inputs to include this pin when byte is low except when stated explicitly otherwise. 2.5 chip enable (e ) the chip enable, e , activates the memory, allowing bus read and bus write operations to be performed. when chip enable is high, v ih , all other pins are ignored. 2.6 output enable (g ) the output enable, g , controls the bus read operation of the memory.
signal descriptions m29w400dt, m29w400db 14/48 2.7 write enable (w ) the write enable, w , controls the bus write operation of the memory?s command interface. 2.8 reset/block temporary unprotect (rp ) the reset/block temporary unprotect pin can be used to apply a hardware reset to the memory or to temporarily unprotect all blocks that have been protected. a hardware reset is achieved by holding reset/block temporary unprotect low, v il , for at least t plpx . after reset/block temporary unprotect goes high, v ih , the memory will be ready for bus read and bus write operations after t phel or t rhel , whichever occurs last. see the ready/busy output section, table 15: reset/block temporary unprotect ac characteristics and figure 14: reset/block temporary unprotect ac waveforms , for more details. holding rp at v id will temporarily unprotect the protec ted blocks in the memory. program and erase operations on all blocks will be possible. the transition from v ih to v id must be slower than t phphh . 2.9 ready/busy output (rb ) the ready/busy pin is an open-drain output that can be used to identify when the memory array can be read. ready/busy is high-impedance during read mode, auto select mode and erase suspend mode. after a hardware reset, bus read and bus write operations cannot begin until ready/busy becomes high-impedance. see table 15: reset/block temporary unprotect ac characteristics and figure 14: reset/block temporary unprotect ac waveforms . during program or erase operations ready/busy is low, v ol . ready/busy will remain low during read/reset commands or hardware resets until the memory is ready to enter read mode. 2.10 byte/word organization select (byte ) the byte/word organization select pin is used to switch between the 8-bit and 16-bit bus modes of the memory. when byte/word organization select is low, v il , the memory is in 8- bit mode, when it is high, v ih , the memory is in 16-bit mode.
m29w400dt, m29w400db signal descriptions 15/48 2.11 v cc supply voltage the v cc supply voltage supplies the power for all operations (read, program, erase etc.). the command interface is disabled when the v cc supply voltage is less than the lockout voltage, v lko . this prevents bus write operations from accidentally damaging the data during power-up, power-down and power surges. if the program/erase controller is programming or erasing during this time then the operation aborts and the memory contents being altered will be invalid. a 0.1 f capacitor should be connected between the v cc supply voltage pin and the v ss ground pin to decouple the current surges from the power supply. the pcb track widths must be sufficient to carry the currents required during program and erase operations, i cc3 . 2.12 v ss ground the v ss ground is the reference for all voltage measurements.
bus operations m29w400dt, m29w400db 16/48 3 bus operations there are five standard bus operations that control the device. these are bus read, bus write, output disable, standby and automatic standby. see ta bl e 2 and ta b l e 3 , bus operations, for a summary. typically glitches of less than 5 ns on chip enable or write enable are ignored by the memory and do not affect bus operations. 3.1 bus read bus read operations read from the memory cells, or specific registers in the command interface. a valid bus read operation involves setting the desired address on the address inputs, applying a low signal, v il , to chip enable and output enable and keeping write enable high, v ih . the data inputs/ outputs will output the value, see figure 11: read mode ac waveforms , and table 12: read ac characteristics , for details of when the output becomes valid. 3.2 bus write bus write operations write to the command interface. a valid bus write operation begins by setting the desired address on the address inputs. the address inputs are latched by the command interface on the falling edge of chip enable or write enable, whichever occurs last. the data inputs/outputs are latched by the command interface on the rising edge of chip enable or write enable, whichever occurs first. output enable must remain high, v ih , during the whole bus write operation. see figure 12 and figure 13 , write ac waveforms, and ta b l e 1 3 and ta bl e 1 4 , write ac characteristics, for details of the timing requirements. 3.3 output disable the data inputs/outputs are in the high impedance state when output enable is high, v ih . 3.4 standby when chip enable is high, v ih , the memory enters standby mode and the data inputs/outputs pins are placed in the high-impedance state. to reduce the supply current to the standby supply current, i cc2 , chip enable should be held within v cc 0.2 v. for the standby current level see table 11: dc characteristics . during program or erase oper ations the memory will contin ue to use the program/erase supply current, i cc3 , for program or erase operations until the operation completes. 3.5 automatic standby if cmos levels (v cc 0.2 v) are used to drive the bus and the bus is inactive for 150 ns or more the memory enters automatic standby where the internal supply current is reduced to the standby supply current, i cc2 . the data inputs/outputs will still output data if a bus read operation is in progress.
m29w400dt, m29w400db bus operations 17/48 3.6 special bus operations additional bus operations can be performed to read the electronic signature and also to apply and remove block protection. these bus operations are intended for use by programming equipment and are not usually used in applications. they require v id to be applied to some pins. 3.7 electronic signature the memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. these codes can be read by applying the signals listed in ta b l e 2 and ta b l e 3 , bus operations. 3.8 block protection and blocks unprotection each block can be separately protected against accidental program or erase. protected blocks can be unprotected to allow data to be changed. there are two methods available for protecting and unprotecting the blocks, one for use on programming equipment and the other for in-syst em use. block protect and chip unprotect operations are described in appendix b: block protection . table 2. bus operations, byte = v il (1) 1. x = v il or v ih . operation e g w address inputs dq15a?1, a0-a17 data inputs/outputs dq14-dq8 dq7-dq0 bus read v il v il v ih cell address hi-z data output bus write v il v ih v il command address hi-z data input output disable x v ih v ih x hi-z hi-z standby v ih x x x hi-z hi-z read manufacturer code v il v il v ih a0 = v il , a1 = v il , a9 = v id , others v il or v ih hi-z 20h read device code v il v il v ih a0 = v ih , a1 = v il , a9 = v id , others v il or v ih hi-z eeh (m29w400dt) efh (m29w400db)
bus operations m29w400dt, m29w400db 18/48 1. x = v il or v ih . table 3. bus operations, byte = v ih operation e g w address inputs a0-a17 data inputs/outputs dq15a?1, dq14-dq0 bus read v il v il v ih cell address data output bus write v il v ih v il command address data input output disable x v ih v ih x hi-z standby v ih x x x hi-z read manufacturer code v il v il v ih a0 = v il , a1 = v il , a9 = v id , others v il or v ih 0020h read device code v il v il v ih a0 = v ih , a1 = v il , a9 = v id , others v il or v ih 00eeh (m29w400dt) 00efh (m29w400db)
m29w400dt, m29w400db command interface 19/48 4 command interface all bus write operations to the memory are interpreted by the command interface. commands consist of one or more sequential bus write operations. failure to observe a valid sequence of bus write operations will resu lt in the memory retu rning to read mode. the long command sequences are imposed to maximize data security. the address used for the commands changes depending on whether the memory is in 16- bit or 8-bit mode. see either ta bl e 5 , or ta b l e 6 , depending on the configuration that is being used, for a summary of the commands. 4.1 read/reset command the read/reset command returns the memory to its read mode where it behaves like a rom or eprom, unless otherwise stated. it also resets the errors in the status register. either one or three bus write operations can be used to issue the read/reset command. the read/reset command can be issued, between bus write cycles before the start of a program or erase operation, to return the device to read mode. once the program or erase operation has started the read/reset command is no longer accepted. the read/reset command will not abort an erase operatio n when issued while in erase suspend. 4.2 auto select command the auto select command is used to read the manufacturer code, the device code and the block protection status. three consecutive bu s write operations are required to issue the auto select command. once the auto select command is issued the memory remains in auto select mode until another command is issued. from the auto select mode the manufacturer code can be read using a bus read operation with a0 = v il and a1 = v il . the other address bits may be set to either v il or v ih . the manufacturer code for stmicroelectronics is 0020h. the device code can be read using a bus read operation with a0 = v ih and a1 = v il . the other address bits may be set to either v il or v ih . the device code for the m29w400dt is 00eeh and for the m29w400db is 00efh. the block protection status of each block can be read using a bus read operation with a0 = v il , a1 = v ih , and a12-a17 specifying the address of the block. the other address bits may be set to either v il or v ih . if the addressed block is protected then 01h is output on data inputs/outputs dq0-dq7, otherwise 00h is output. 4.3 program command the program command can be used to program a value to one address in the memory array at a time. the command requires four bus write operations, the final write operation latches the address and data and starts the program/erase controller. if the address falls in a protected block then the program command is ignored, the data remains unchanged. the status register is ne ver read and no error condition is given.
command interface m29w400dt, m29w400db 20/48 during the program operation the memory will i gnore all commands. it is not possible to issue any command to abort or pause the operation. typical program times are given in table 4: program, erase times and program, erase endurance cycles . bus read operations during the program operation will output the status register on the data inputs/outputs. see the section on the status register for more details. after the program operat ion has completed the memory will re turn to the read mode, unless an error has occurred. when an error occurs the memory will continue to output the status register. a read/reset command must be issued to reset the error condition and return to read mode. note that the program command cannot change a bit set at ?0? back to ?1?. one of the erase commands must be used to set all the bits in a block or in the whole memory from ?0? to ?1?. 4.4 unlock bypass command the unlock bypass command is used in conjunction with the unlock bypass program command to program the memory. when the access time to the device is long (as with some eprom programmers) considerable time saving can be made by using these commands. three bus write operations are required to issue the unlock bypass command. once the unlock bypass command has been is sued the memory will only accept the unlock bypass program command and the unlock bypass reset command. the memory can be read as if in read mode. 4.5 unlock bypass program command the unlock bypass program command can be used to program one address in memory at a time. the command requires two bus write operations, the final write operation latches the address and data and starts the program/erase controller. the program operation using the unlock bypass program command behaves identically to the program operation using the program command. a protected block cannot be programmed; the operation cannot be aborted and the status register is read. errors must be reset using the read/reset command, which leaves the device in unlock bypass mode. see the program command for details on the behavior. 4.6 unlock bypass reset command the unlock bypass reset command can be used to return to read/reset mode from unlock bypass mode. two bus write operations are required to issue the unlock bypass reset command. read/reset command does not exit from unlock bypass mode. 4.7 chip erase command the chip erase command can be used to erase the entire chip. six bus write operations are required to issue the chip erase command and start the program/erase controller. if any blocks are protected then these are ignored and all the other blocks are erased. if all of the blocks are protected the chip erase operation appears to start but will terminate
m29w400dt, m29w400db command interface 21/48 within about 100 s, leaving the data unchanged. no error condition is given when protected blocks are ignored. during the erase operation the memory will ignore all commands. it is not possible to issue any command to abort the operation. typical chip erase times are given in ta bl e 4 . all bus read operations during the chip erase operation will ou tput the status register on the data inputs/outputs. see the section on the status register for more details. after the chip erase operation has complet ed the memory will return to the read mode, unless an error has occurred. when an error oc curs the memory will co ntinue to output the status register. a read/reset command must be issued to reset the error condition and return to read mode. the chip erase command sets all of the bits in unprotected blocks of the memory to ?1?. all previous data is lost. 4.8 block erase command the block erase command can be used to erase a list of one or more blocks. six bus write operations are required to select the first block in the list. each additional block in the list can be selected by repeating the sixth bus write operation using the address of the additional block. the block erase operation starts the program/erase controller about 50 s after the last bus write operation. once the program/erase controller starts it is not possible to select any more blocks. each additional block must therefore be selected within 50 s of the last block. the 50 s timer restarts when an additional block is selected. the status register can be read after the sixth bus write operation. see the status register for details on how to identify if the program/erase controller has started the block erase operation. if any selected blocks are protected then these are ignored and all the other selected blocks are erased. if all of the selected blocks are protected the block erase operation appears to start but will terminate within about 100 s, leaving the data unchanged. no error condition is given when protected blocks are ignored. during the block erase operat ion the memory will ignore a ll commands except the erase suspend command. typical block erase times are given in ta bl e 4 . all bus read operations during the block erase operation will output the st atus register on the data inputs/outputs. see the section on the status register for more details. after the block erase operation has complete d the memory will return to the read mode, unless an error has occurred. when an error oc curs the memory will co ntinue to output the status register. a read/reset command must be issued to reset the error condition and return to read mode. the block erase command sets all of the bits in the unprotected selected blocks to ?1?. all previous data in the selected blocks is lost. 4.9 erase suspend command the erase suspend command may be used to temporarily suspend a block erase operation and return the memory to read mode. the command requires one bus write operation. the program/erase controller will suspend within the erase sus pend latency time after the erase suspend command is issued (see ta b l e 4 for numerical values). once the program/erase controller has st opped the memory will be set to read mode and the erase
command interface m29w400dt, m29w400db 22/48 will be suspended. if the erase suspend comman d is issued during the period when the memory is waiting for an additional block (before the program/erase controller starts) then the erase is suspended immediately and will start immediately when the erase resume command is issued. it is not possible to select any further blocks to erase after the erase resume. during erase suspend it is possible to read and program cells in blocks that are not being erased; both read and program operations behave as normal on these blocks. if any attempt is made to program in a protected block or in the suspended block then the program command is ignored and the data remains unchanged. the status register is not read and no error condition is given. reading from bloc ks that are being erased will output the status register. it is also possible to issue the auto select and unlock bypass commands during an erase suspend. the read/reset command must be issued to return the device to read array mode before the resume command will be accepted. 4.10 erase resume command the erase resume command must be used to restart the program/erase controller from erase suspend. an erase can be suspended and resumed more than once. 4.11 block protect and chip unprotect commands each block can be separately protected against accidental program or erase. the whole chip can be unprotected to allow the data inside the blocks to be changed. block protect and chip unprotect operations are described in appendix b: block protection . table 4. program, erase times and program, erase endurance cycles parameter min typ (1)(2) 1. typical values measured at room temperature and nominal voltages. max (2) 2. sampled, but not 100% tested. unit chip erase (all bits in the memory set to ?0?) 2.5 s chip erase 6 35 (3) 3. maximum value measured at worst case conditions for both temperature and v cc after 100,000 program/erase cycles. s block erase (64 kbytes) 0.8 6 (4) 4. maximum value measured at worst case conditions for both temperature and v cc . s program (byte or word) 10 200 (3) s chip program (byte by byte) 5.5 30 (3) s chip program (word by word) 2.8 15 (3) s erase suspend latency time 18 25 (4) s program/erase cycles (per block) 100,000 cycles data retention 20 years
m29w400dt, m29w400db command interface 23/48 table 5. commands, 16-bit mode, byte = v ih (1) command length bus write operations 1st 2nd 3rd 4th 5th 6th addr data addr data addr data addr data addr data addr data read/reset 1x f0 3 555 aa 2aa 55 x f0 auto select 3 555 aa 2aa 55 555 90 program 4 555 aa 2aa 55 555 a0 pa pd unlock bypass 3 555 aa 2aa 55 555 20 unlock bypass program 2 x a0 pa pd unlock bypass reset 2x 90 x00 chip erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 555 10 block erase 6+ 555 aa 2aa 55 555 80 555 aa 2aa 55 ba 30 erase suspend 1 x b0 erase resume 1 x 30 1. x don?t care, pa program address, pd program data, ba any address in the block. all values in the table are in hexadecimal. the command interface only uses a-1; a0-a10 and dq0-dq7 to verify the commands; a11-a17, dq8-dq14 and dq15 are don't care. dq15a-1 is a-1 when byte is v il or dq15 when byte is v ih . table 6. commands, 8-bit mode, byte = v il (1) command length bus write operations 1st 2nd 3rd 4th 5th 6th addr data addr data addr data addr data addr data addr data read/reset 1x f0 3 aaa aa 555 55 x f0 auto select 3 aaa aa 555 55 aaa 90 program 4 aaa aa 555 55 aaa a0 pa pd unlock bypass 3 aaa aa 555 55 aaa 20 unlock bypass program 2x a0papd unlock bypass reset 2 x 90 x 00 chip erase 6 aaa aa 555 55 aaa 80 aaa aa 555 55 aaa 10 block erase 6+ aaa aa 555 55 aaa 80 aaa aa 555 55 ba 30 erase suspend 1 x b0 erase resume 1 x 30 1. x don?t care, pa program address, pd program data, ba any address in the block. all values in the table are in hexadecimal. the command interface only uses a-1; a0-a10 and dq0-dq7 to verify the commands; a11-a17, dq8-dq14 and dq15 are don't care. dq15a-1 is a-1 when byte is v il or dq15 when byte is v ih .
status register m29w400dt, m29w400db 24/48 5 status register bus read operations from any address always read the status register during program and erase operations. it is also read during erase suspend when an address within a block being erased is accessed. the bits in the status register are summarized in table 7: status register bits . 5.1 data polling bit (dq7) the data polling bit can be used to identify whether the program/erase controller has successfully completed its operation or if it has responded to an erase suspend. the data polling bit is output on dq7 when the status register is read. during program operations the data polling bi t outputs the complement of the bit being programmed to dq7. after successful completion of the program operation the memory returns to read mode and bus read operations from the address just programmed output dq7, not its complement. during erase operations the data polling bit ou tputs ?0?, the compleme nt of the erased state of dq7. after successful completion of the erase operation the memory returns to read mode. in erase suspend mode the da ta polling bit will output a ?1? during a bus read operation within a block being erased. the data polling bit will change from a ?0? to a ?1? when the program/erase controller has suspended the erase operation. figure 7: data polling flowchart , gives an example of how to use the data polling bit. a valid address is the address being programmed or an address within the block being erased. 5.2 toggle bit (dq6) the toggle bit can be used to identify whether the program/erase controller has successfully completed its operation or if it has responded to an erase suspend. the toggle bit is output on dq6 when the status register is read. during program and erase operations the toggle bit changes from ?0? to ?1? to ?0?, etc., with successive bus read operations at any addres s. after successful completion of the operation the memory returns to read mode. during erase suspend mo de the toggle bit will output when addressing a cell within a block being erased. the toggle bit will stop togglin g when the program/erase controller has suspended the erase operation. if any attempt is made to erase a protected block, the operation is aborted, no error is signalled and dq6 toggles for approximately 100 s. if any attempt is made to program a protected block or a suspended block, the operation is aborted, no error is signalled and dq6 toggles for approximately 1 s. figure 8: data toggle flowchart , gives an example of how to use the data toggle bit.
m29w400dt, m29w400db status register 25/48 5.3 error bit (dq5) the error bit can be used to identify errors detected by the program/erase controller. the error bit is set to ?1? when a program, block erase or chip erase operation fails to write the correct data to the memory. if the error bit is set a read/reset command must be issued before other commands are issued. the error bit is output on dq5 when the status register is read. note that the program command cannot change a bit set to ?0? back to ?1? and attempting to do so will set dq5 to ?1?. a bus read operation to that address will show the bit is still ?0?. one of the erase commands must be used to set all the bits in a block or in the whole memory from ?0? to ?1? 5.4 erase timer bit (dq3) the erase timer bit can be used to identify t he start of program/erase controller operation during a block erase command. once the program/erase controller starts erasing, the erase timer bit is set to ?1?. before the program/erase controller starts the erase timer bit is set to ?0? and additional blocks to be erased may be written to the command interface. the erase timer bit is output on dq3 when the status register is read. 5.5 alternative toggle bit (dq2) the alternative toggle bit can be used to monitor the program/erase controller during erase operations. the alternative toggle bit is output on dq2 when the status register is read. during chip erase and block erase operations the toggle bit changes from ?0? to ?1? to ?0?, etc., with successive bus read operations from addresses within the blocks being erased. a protected block is treated the same as a block not being erased. once the operation completes the memory returns to read mode. during erase suspend the alternative toggle bit changes from ?0? to ?1? to ?0?, etc. with successive bus read operations from addresses within the blocks being erased. bus read operations to addresses within blocks not be ing erased will output the me mory cell data as if in read mode. after an erase operation that causes the error bit to be set the alternative toggle bit can be used to identify which block or blocks have caused the error. the alternative toggle bit changes from ?0? to ?1? to ?0 ?, etc. with successive bus read operations from addresses within blocks that have not erased correctly. the alternative toggle bit does not change if the addressed block has erased correctly. table 7. status register bits (1) operation address dq7 dq6 dq5 dq3 dq2 rb program any address dq7 toggle 0 ? ? 0 program during erase suspend any address dq7 toggle 0 ? ? 0 program error any address dq7 toggle 1 ? ? 0 chip erase any address 0 toggle 0 1 toggle 0
status register m29w400dt, m29w400db 26/48 figure 7. data polling flowchart block erase before timeout erasing block 0 toggle 0 0 toggle 0 non-erasing block 0 toggle 0 0 no toggle 0 block erase erasing block 0 toggle 0 1 toggle 0 non-erasing block 0 toggle 0 1 no toggle 0 erase suspend erasing block 1 no toggle 0 ? toggle 1 non-erasing block data read as normal 1 erase error good block address 0 toggle 1 1 no toggle 0 faulty block address 0 toggle 1 1 toggle 0 1. unspecified data bits should be ignored. table 7. status register bits (1) (continued) operation address dq7 dq6 dq5 dq3 dq2 rb read dq5 & dq7 at valid address start read dq7 at valid address fail pass ai03598 dq7 = data yes no yes no dq5 = 1 dq7 = data yes no
m29w400dt, m29w400db status register 27/48 figure 8. data toggle flowchart read dq6 start read dq6 twice fail pass ai01370c dq6 = toggle no no yes yes dq5 = 1 no yes dq6 = toggle read dq5 & dq6
maximum rating m29w400dt, m29w400db 28/48 6 maximum rating stressing the device above the rating listed in table 8: absolute maximum ratings may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device relia bility. these are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. refer also to the stmicroelectronics sure program and other relevant quality documents. table 8. absolute maximum ratings symbol parameter min max unit t bias temperature under bias ?50 125 c t stg storage temperature ?65 150 c t lead lead temperature during soldering (1) 1. compliant with the jedec std j-std-020b (for sm all body, sn-pb or pb assermbly), the st ecopack ? 7191395 specification, and the european directive on re strictions on hazardous substances (rohs) 2002/95/eu. c v io input or output voltage (2)(3) 2. minimum voltage may undershoot to ?2 v during trans ition and for less than 20 ns during transitions. 3. maximum voltage may overshoot to v cc +2 v during transition and for less than 20 ns during transitions. ?0.6 v cc +0.6 v v cc supply voltage ?0.6 4 v v id identification voltage ?0.6 13.5 v
m29w400dt, m29w400db dc and ac parameters 29/48 7 dc and ac parameters this section summarizes the operating measurement conditions, and the dc and ac characteristics of the device. the parameters in the dc and ac characteristics tables that follow, are derived from tests performed under the measurement conditions summarized in table 9: operating and ac measurement conditions . designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. figure 9. ac measurement i/o waveform figure 10. ac measurement load circuit table 9. operating and ac measurement conditions parameter m29w400d unit 45 55 70 min max min max min max v cc supply voltage 3.0 3.6 2.7 3.6 2.7 3.6 v ambient operating temperature (range 6) ?40 85 ?40 85 ?40 85 c ambient operating temperature (range 1) 0 70 0 70 0 70 load capacitance (c l ) 30 30 100 pf input rise and fall times 10 10 10 ns input pulse voltages 0 to v cc 0 to v cc 0 to v cc v input and output timing ref. voltages v cc /2 v cc /2 v cc /2 v ai04498 v cc 0 v v cc /2 ai04499 c l c l includes jig capacitance device under test 25 k ? v cc 25 k ? v cc 0.1 f
dc and ac parameters m29w400dt, m29w400db 30/48 figure 11. read mode ac waveforms table 10. device capacitance (1) 1. sampled only, not 100% tested. symbol parameter test condition min max unit c in input capacitance v in = 0 v 6 pf c out output capacitance v out = 0 v 12 pf table 11. dc characteristics symbol parameter test condition min max unit i li input leakage current 0 v v in v cc 1 a i lo output leakage current 0 v v out v cc 1 a i cc1 supply current (read) e =v il , g =v ih , f=6mhz 10 ma i cc2 supply current (standby) e = v cc 0.2v, rp =v cc 0.2v 100 a i cc3 (1) 1. sampled only, not 100% tested. supply current (program/erase) program/erase controller active 20 ma v il input low voltage ?0.5 0.8 v v ih input high voltage 0.7v cc v cc +0.3 v v ol output low voltage i ol = 1.8 ma 0.45 v v oh output high voltage i oh =?100 av cc ?0.4 v v id identification voltage 11.5 12.5 v i id identification current a9 = v id 100 a v lko program/erase lockout supply voltage 1.8 2.3 v ai02907 tavav tavqv taxqx telqx tehqz tglqv tglqx tghqx valid a0-a17/ a?1 g dq0-dq7/ dq8-dq15 e telqv tehqx tghqz valid tbhqv telbl/telbh tblqz byte
m29w400dt, m29w400db dc and ac parameters 31/48 table 12. read ac characteristics symbol alt parameter test condition m29w400d unit 45 55 70 t avav t rc address valid to next address valid e =v il , g =v il min455570 ns t avqv t acc address valid to output valid e =v il , g =v il max455570 ns t elqx (1) t lz chip enable low to output transition g =v il min000ns t elqv t ce chip enable low to output valid g =v il max455570 ns t glqx (1) t olz output enable low to output tr a n s i t i o n e =v il min000ns t glqv t oe output enable low to output valid e =v il max253035 ns t ehqz (1) t hz chip enable high to output hi-z g =v il max202530 ns t ghqz (1) t df output enable high to output hi-z e =v il max202530 ns t ehqx t ghqx t axqx t oh chip enable, output enable or address transition to output transition min000ns t elbl t elbh t elfl t elfh chip enable to byte low or high max 5 5 5 ns t blqz t flqz byte low to output hi-z max 25 25 30 ns t bhqv t fhqv byte high to output valid max 30 30 40 ns 1. sampled only, not 100% tested.
dc and ac parameters m29w400dt, m29w400db 32/48 figure 12. write ac waveforms, write enable controlled ai01869c e g w a0-a17/ a?1 dq0-dq7/ dq8-dq15 valid valid v cc tvchel twheh twhwl telwl tavwl twhgl twlax twhdx tavav tdvwh twlwh tghwl rb twhrl table 13. write ac characteristics, write enable controlled symbol alt parameter m29w400d unit 45 55 70 t avav t wc address valid to next address valid min 45 55 70 ns t elwl t cs chip enable low to write enable low min 0 0 0 ns t wlwh t wp write enable low to write enable high min 30 30 30 ns t dvwh t ds input valid to write enable high min 25 30 45 ns t whdx t dh write enable high to input transition min 0 0 0 ns t wheh t ch write enable high to chip enable high min 0 0 0 ns t whwl t wph write enable high to write enable low min 30 30 30 ns t avwl t as address valid to write enable low min 0 0 0 ns t wlax t ah write enable low to address transition min 40 45 45 ns t ghwl output enable high to write enable low min 0 0 0 ns t whgl t oeh write enable high to output enable low min 0 0 0 ns t whrl (1) t busy program/erase valid to rb low max 30 30 35 ns t vchel t vcs v cc high to chip enable low min 50 50 50 s 1. sampled only, not 100% tested.
m29w400dt, m29w400db dc and ac parameters 33/48 figure 13. write ac waveforms, chip enable controlled ai01870c e g w a0-a17/ a?1 dq0-dq7/ dq8-dq15 valid valid v cc tvchwl tehwh tehel twlel tavel tehgl telax tehdx tavav tdveh teleh tghel rb tehrl table 14. write ac characteristics, chip enable controlled symbol alt parameter m29w400d unit 45 55 70 t avav t wc address valid to next address valid min 45 55 70 ns t wlel t ws write enable low to chip enable low min 0 0 0 ns t eleh t cp chip enable low to chip enable high min 30 30 30 ns t dveh t ds input valid to chip enable high min 25 30 45 ns t ehdx t dh chip enable high to input transition min 0 0 0 ns t ehwh t wh chip enable high to write enable high min 0 0 0 ns t ehel t cph chip enable high to chip enable low min 30 30 30 ns t avel t as address valid to chip enable low min 0 0 0 ns t elax t ah chip enable low to address transition min 40 45 45 ns t ghel output enable high chip enable low min 0 0 0 ns t ehgl t oeh chip enable high to output enable low min 0 0 0 ns t ehrl (1) t busy program/erase valid to rb low max 30 30 35 ns t vchwl t vcs v cc high to write enable low min 50 50 50 s 1. sampled only, not 100% tested.
dc and ac parameters m29w400dt, m29w400db 34/48 figure 14. reset/block temporary unprotect ac waveforms ai02931 rb w, rp tplpx tphwl, tphel, tphgl tplyh tphphh e, g trhwl, trhel, trhgl table 15. reset/block temporary unprotect ac characteristics symbol alt parameter m29w400d unit 45 55 70 t phwl (1) t phel t phgl (1) t rh rp high to write enable low, chip enable low, output enable low min 505050 ns t rhwl (1) t rhel (1) t rhgl (1) t rb rb high to write enable low, chip enable low, output enable low min 0 0 0 ns t plpx t rp rp pulse width min 500 500 500 ns t plyh (1) t ready rp low to read mode max 10 10 10 s t phphh (1) t vidr rp rise time to v id min 500 500 500 ns 1. sampled only, not 100% tested.
m29w400dt, m29w400db package mechanical 35/48 8 package mechanical figure 15. so44 - 44 lead plastic small outline, 525 mils body width, package outline 1. drawing is not to scale. table 16. so44 ? 44 lead plastic small outline, 525 mils body width, package mechanical data symbol millimeters inches typ min max typ min max a 2.80 0.110 a1 0.10 0.004 a2 2.30 2.20 2.40 0.091 0.087 0.094 b 0.40 0.35 0.50 0.016 0.014 0.020 c 0.15 0.10 0.20 0.006 0.004 0.008 cp 0.08 0.003 d 28.20 28.00 28.40 1.110 1.102 1.118 e 13.30 13.20 13.50 0.524 0.520 0.531 eh 16.00 15.75 16.25 0.630 0.620 0.640 e1.27 ? ? 0.050 ? ? l0.80 0.031 a8 8 n44 44 so-d e n d c l a1 eh a 1 e cp b a2
package mechanical m29w400dt, m29w400db 36/48 figure 16. tsop48 ? 48 lead plastic thin small outline, 12 x 20 mm, package outline 1. drawing is not to scale. table 17. tsop48 ? 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data symbol millimeters inches typ min max typ min max a 1.20 0.047 a1 0.10 0.05 0.15 0.004 0.002 0.006 a2 1.00 0.95 1.05 0.039 0.037 0.041 b 0.22 0.17 0.27 0.009 0.007 0.011 c 0.10 0.21 0.004 0.008 cp 0.08 0.003 d1 12.00 11.90 12.10 0.472 0.468 0.476 e 20.00 19.80 20.20 0.787 0.779 0.795 e1 18.40 18.30 18.50 0.724 0.720 0.728 e0.50 ? ? 0.020 ? ? l 0.60 0.50 0.70 0.024 0.020 0.028 l1 0.80 0.031 a305305 tsop-g b e die c l a1 e1 e a a2 1 24 48 25 d1 l1 cp
m29w400dt, m29w400db package mechanical 37/48 figure 17. tfbga48 6 x 9 mm, 6 x 8 active ball array, 0.80 mm pitch, bottom view package outline 1. drawing is not to scale. table 18. tfbga48 6 x 9 mm, 6 x 8 active ball array, 0.80 mm pitch, package mechanical data symbol millimeters inches typ min max typ min max a1.200.047 a1 0.20 0.008 a2 1.00 0.039 b 0.40 0.35 0.45 0.016 0.014 0.018 d 6.00 5.90 6.10 0.236 0.232 0.240 d1 4.00 ? ? 0.157 ? ? ddd 0.10 0.004 e 9.00 8.90 9.10 0.354 0.350 0.358 e0.80? ?0.031? ? e1 5.60 ? ? 0.220 ? ? fd 1.00 ? ? 0.039 ? ? fe 1.70 ? ? 0.067 ? ? sd 0.40 ? ? 0.016 ? ? se 0.40 ? ? 0.016 ? ? e1 e d1 d e b a2 a1 a bga-z00 ddd fd fe sd se e ball "a1"
package mechanical m29w400dt, m29w400db 38/48 figure 18. tfbga48 6 x 8 mm, 6 x 8 active ball array, 0.80 mm pitch, bottom view package outline 1. drawing is not to scale. table 19. tfbga48 6 x 8 mm, 6 x 8 active ball array, 0.80 mm pitch, package mechanical data symbol millimeters inches typ min max typ min max a 1.20 0.047 a1 0.26 0.010 a2 0.90 0.035 b 0.35 0.45 0.014 0.018 d 6.00 5.90 6.10 0.236 0.232 0.240 d1 4.00 ? ? 0.157 ? ? ddd 0.10 0.004 e 8.00 7.90 8.10 0.315 0.311 0.319 e1 5.60 ? ? 0.220 ? ? e0.80? ?0.031? ? fd 1.00 ? ? 0.039 ? ? fe 1.20 ? ? 0.047 ? ? sd 0.40 ? ? 0.016 ? ? se 0.40 ? ? 0.016 ? ? e1 e d1 d eb a2 a1 a bga-z32 ddd fd fe sd se e ball "a1"
m29w400dt, m29w400db part numbering 39/48 9 part numbering table 20. ordering information scheme devices are shipped from the factory with the memory content bits erased to ?1?. for a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact the st sales office nearest to you. example: m29w400dt 55 n 6 t device type m29 operating voltage w = v cc = 2.7 to 3.6 v device function 400d = 4 mbit (512 kb x 8 or 256 kb x 16), boot block array matrix t = top boot b = bottom boot speed 45 = 45 ns 55 = 55 ns 70 = 70 ns package m = so44 n = tsop48: 12 x 20 mm za = tfbga48: 6 x 9 mm ze = tfbga48: 6 x 8 mm temperature range 6 = ?40 to 85 c 1 = 0 to 70 c option blank = standard packing t = tape & reel packing e = ecopack package, standard packing f = ecopack package, tape & reel packing
block address table m29w400dt, m29w400db 40/48 appendix a block address table table 21. top boot block addresses m29w400dt # size (kbytes) address range (x 8) address range (x 16) 10 16 7c000h-7ffffh 3e000h-3ffffh 9 8 7a000h-7bfffh 3d000h-3dfffh 8 8 78000h-79fffh 3c000h-3cfffh 7 32 70000h-77fffh 38000h-3bfffh 6 64 60000h-6ffffh 30000h-37fffh 5 64 50000h-5ffff h 28000h-2ffffh 4 64 40000h-4ffffh 20000h-27fffh 3 64 30000h-3ffff h 18000h-1ffffh 2 64 20000h-2ffffh 10000h-17fffh 1 64 10000h-1ffff h 08000h-0ffffh 0 64 00000h-0ffffh 00000h-07fffh table 22. bottom boot block addresses m29w400db # size (kbytes) address range (x 8) address range (x 16) 10 64 70000h-7ffff h 38000h-3ffffh 9 64 60000h-6ffffh 30000h-37fffh 8 64 50000h-5ffff h 28000h-2ffffh 7 64 40000h-4ffffh 20000h-27fffh 6 64 30000h-3ffff h 18000h-1ffffh 5 64 20000h-2ffffh 10000h-17fffh 4 64 10000h-1ffff h 08000h-0ffffh 3 32 08000h-0ffffh 04000h-07fffh 2 8 06000h-07fffh 03000h-03fffh 1 8 04000h-05fffh 02000h-02fffh 0 16 00000h-03fffh 00000h-01fffh
m29w400dt, m29w400db block protection 41/48 appendix b block protection block protection can be used to prevent any operation from modifying the data stored in the flash. each block can be protected individually. once protected, program and erase operations on the block fail to change the data. there are three techniques that can be used to control block protection, these are the programmer technique, the in-system technique and temporary unprotection. temporary unprotection is controlled by the reset/block temporary unprotection pin, rp ; this is described in the section 2: signal descriptions . unlike the command interface of the program/erase controller, the techniques for protecting and unprotecting blocks change between different flash memory suppliers. for example, the techniques for amd parts will not work on stmicroelectronics parts. care should be taken when changing drivers for one part to work on another. b.1 programmer technique the programmer technique uses high (v id ) voltage levels on some of the bus pins. these cannot be achieved using a standard microprocessor bus, therefore the technique is recommended only for use in programming equipment. to protect a block follow the flowchart in figure 19: programmer equipment block protect flowchart . to unprotect the whole chip it is necessary to protect all of the blocks first, then all blocks can be unprotected at the same time. to unprotect the chip follow figure 20: programmer equipment chip unprotect flowchart . table 23: programmer technique bus operations, byte = vih or vil , gives a summary of each operation. the timing on these flowcharts is critical. care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. do not abort the procedure before reaching the end. chip unprotect can take several seconds and a user message should be provided to show that the operation is progressing. b.2 in-system technique the in-system technique requires a high voltage level on the reset/blocks temporary unprotect pin, rp . this can be achieved without violating the maximum ratings of the components on the microprocessor bus, therefore this technique is suitable for use after the flash has been fitted to the system. to protect a block follow the flowchart in figure 21: in-system equipment block protect flowchart . to unprotect the whole chip it is necessary to protect all of the blocks first, then all the blocks can be unprotected at the same time. to unprotect the chip follow figure 22: in- system equipment chip unprotect flowchart . the timing on these flowcharts is critical. care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. do not allow the microprocessor to service interrupts that will upset the timing a nd do not abort the proc edure before reaching the end. chip unprotect can take several seconds and a user message should be provided to show that the operation is progressing.
block protection m29w400dt, m29w400db 42/48 table 23. programmer technique bus operations, byte =v ih or v il operation e g w address inputs a0-a17 data inputs/outputs dq15a?1, dq14-dq0 block protect v il v id v il pulse a9 = v id , a12-a17 block address, others = x x chip unprotect v id v id v il pulse a9 = v id , a12 = v ih , a15 = v ih , others = x x block protection verify v il v il v ih a0 = v il , a1 = v ih , a6 = v il , a9 = v id , a12-a17 block address, others = x pass = xx01h retry = xx00h block unprotection verify v il v il v ih a0 = v il , a1 = v ih , a6 = v ih , a9 = v id , a12-a17 block address, others = x retry = xx01h pass = xx00h
m29w400dt, m29w400db block protection 43/48 figure 19. programmer equipment block protect flowchart address = block address ai03469 g, a9 = v id , e = v il n = 0 wait 4 s wait 100 s w = v il w = v ih e, g = v ih , a0, a6 = v il , a1 = v ih a9 = v ih e, g = v ih ++n = 25 start fail pass yes no data = 01h yes no w = v ih e = v il wait 4 s g = v il wait 60 ns read data verify protect set-up end a9 = v ih e, g = v ih
block protection m29w400dt, m29w400db 44/48 figure 20. programmer equipment chip unprotect flowchart protect all blocks ai03470 a6, a12, a15 = v ih e, g, a9 = v id data w = v ih e, g = v ih address = current block address a0 = v il , a1, a6 = v ih wait 10 ms = 00h increment current block n = 0 current block = 0 wait 4 s w = v il ++n = 1000 start yes yes no no last block yes no e = v il wait 4 s g = v il wait 60 ns read data fail pass verify unprotect set-up end a9 = v ih e, g = v ih a9 = v ih e, g = v ih
m29w400dt, m29w400db block protection 45/48 figure 21. in-system equipment block protect flowchart ai03471 write 60h address = block address a0 = v il , a1 = v ih , a6 = v il n = 0 wait 100 s write 40h address = block address a0 = v il , a1 = v ih , a6 = v il rp = v ih ++n = 25 start fail pass yes no data = 01h yes no rp = v ih wait 4 s verify protect set-up end read data address = block address a0 = v il , a1 = v ih , a6 = v il rp = v id issue read/reset command issue read/reset command write 60h address = block address a0 = v il , a1 = v ih , a6 = v il
block protection m29w400dt, m29w400db 46/48 figure 22. in-system equipment chip unprotect flowchart ai03472 write 60h any address with a0 = v il , a1 = v ih , a6 = v ih n = 0 current block = 0 wait 10 ms write 40h address = current block address a0 = v il , a1 = v ih , a6 = v ih rp = v ih ++n = 1000 start fail pass yes no data = 00h yes no rp = v ih wait 4 s read data address = current block address a0 = v il , a1 = v ih , a6 = v ih rp = v id issue read/reset command issue read/reset command protect all blocks increment current block last block yes no write 60h any address with a0 = v il , a1 = v ih , a6 = v ih verify unprotect set-up end
m29w400dt, m29w400db revision history 47/48 10 revision history table 24. document revision history date revision changes 26-jul-2002 01 initial release 19-feb-2003 2.0 revision numbering modified: a minor revision will be indicated by incrementing the digit after the dot, and a major revision, by incrementing the digit before the dot (revision version 01 equals 1.0). revision history moved to end of document. typical after 100k w/e cycles column removed from ta b l e 4 : p r o g r a m , erase times and program, erase endurance cycles , data retention and erase suspend latency time parameters added. common flash interface removed from datasheet. lead-free package options e and f added to table 20: ordering information scheme . document promoted from product prev iew to preliminary data status. 28-may-2003 2.1 t wlwh and t eleh parameters modified for all speed classes in ta b l e 1 3 : write ac characteristics, write enable controlled and ta b l e 1 4 : w r i t e ac characteristics, chip enable controlled . minor text changes. tsop48 package updated ( figure 16 and ta b l e 1 7 ). 30-sep-2003 2.2 document status changed to full datasheet. tfbga48 6 x 8 package added. t lead parameter added in table 8: absolute maximum ratings . 6-oct-2003 2.3 t glqv modified in table 12: read ac characteristics . 16-jan-2004 3 rb pin description corrected in ta b l e : . 8-jun-2004 4 tape and reel option updated in table 20: ordering information scheme . lead-free packaging promotion updated in section 1: description , section 6: maximum rating and section 9: part numbering . 07-aug-2007 5 ecopack ? text added in section 1: description . updated options e and f in table 20: ordering information scheme . small text changes.
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